The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Sep. 03, 2012
Applicants:

Hui Guo, Xi'an, CN;

Keji Zhang, Xi'an, CN;

Yuming Zhang, Xi'an, CN;

Pengfei Deng, Xi'an, CN;

Tianmin Lei, Xi'an, CN;

Inventors:

Hui Guo, Xi'an, CN;

Keji Zhang, Xi'an, CN;

Yuming Zhang, Xi'an, CN;

Pengfei Deng, Xi'an, CN;

Tianmin Lei, Xi'an, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/02 (2006.01); C23C 16/26 (2006.01); C01B 31/04 (2006.01); C23C 16/02 (2006.01); C23C 16/56 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/02527 (2013.01); C23C 16/26 (2013.01); C01B 31/0446 (2013.01); C23C 16/0218 (2013.01); C23C 16/0272 (2013.01); C23C 16/56 (2013.01); H01L 21/02381 (2013.01); H01L 21/0262 (2013.01); H01L 21/02664 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 2204/32 (2013.01);
Abstract

A method for preparing graphene by reaction with Clbased on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C.-1150° C. gradually, supplying CHand carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying CHand SiH, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of Hgradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl, and reacting Clwith 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C. for 10-30 min to reconstruct the carbon film into graphene; and taking out of the metal film from the sample wafer of graphene to obtain large area graphene. The graphene obtained by the method has large area, smooth surface, good continuity, and low porosity; and the product can be used to seal gas and liquid.


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