The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Jul. 03, 2013
Applicant:

Spts Technologies Limited, Coed Rhedyn, Newport, GB;

Inventors:

Stephen R Burgess, Gwent, GB;

Alex Theodosiou, Caerphilly, GB;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/20 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/20 (2013.01); H01J 37/321 (2013.01); H01J 37/32862 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method is for etching successive substrates on a platen in an inductively coupled plasma chamber in which the etching process results in carbonaceous deposits in the chamber. The method includes (a) interrupting the etching processing of substrates, (b) running an oxygen or oxygen containing plasma within the chamber and removing gaseous by-products, and (c) resuming the etch processing of substrates. The method is characterized in that it further includes the step of running an argon plasma in the chamber after step (b) with the platen biased.


Find Patent Forward Citations

Burgess, Stephen. (2015). Method of etching (U.S. Patent No. 9048066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9048066

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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