The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Dec. 27, 2012
Applicant:

Lite-on Technology Corporation, Taipei, TW;

Inventors:

Shih-Jia Zeng, Hsinchu, TW;

Chien-Fu Tseng, Hsinchu, TW;

Hsie-Chia Chang, Hsinchu, TW;

Yen-Yu Chou, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G06F 11/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/3418 (2013.01); G11C 16/3422 (2013.01); G11C 16/3431 (2013.01); G06F 11/1048 (2013.01); G11C 16/0483 (2013.01);
Abstract

A data compensating method for a flash memory is provided. Firstly, a first threshold voltage distribution curve of the cells of the flash memory with a first storing state is acquired. Then, a second threshold voltage distribution curve of the cells of the flash memory with a second storing state is acquired. Then, a first occurrence probability of a first type ICI pattern of the first storing state is calculated according to a statistic voltage range and the first threshold voltage distribution curve. A second occurrence probability of the first type ICI pattern of the second storing state is acquired according to the statistic voltage range and the second threshold voltage distribution curve. During a read cycle, storing states of central cells corresponding to the first type ICI pattern are compensated according to the first occurrence probability and the second occurrence probability.


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