The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
May. 19, 2011
Jinfeng Kang, Beijing, CN;
Bin Gao, Beijing, CN;
Yuansha Chen, Beijing, CN;
Bing Sun, Beijing, CN;
Lifeng Liu, Beijing, CN;
Xiaoyan Liu, Beijing, CN;
Jinfeng Kang, Beijing, CN;
Bin Gao, Beijing, CN;
Yuansha Chen, Beijing, CN;
Bing Sun, Beijing, CN;
Lifeng Liu, Beijing, CN;
Xiaoyan Liu, Beijing, CN;
Peking University, , CN;
Abstract
A resistive random access memory device, a method for manufacturing the resistive random access memory device, and a method for operating the resistive random access memory device are disclosed. The resistive random access memory device includes a resistive switching memory element including two electrodes and a layer of variable-resistance material between the two electrodes, wherein the layer of variable-resistance material exhibits bipolar resistive switching behavior; and a Schottky diode including a metal layer and a p-doped semiconductor layer which contact each other, wherein the metal layer of the Schottky diode is coupled to one of the two electrodes of the resistive switching memory element. The present disclosure provides the resistive random access memory device operating in bipolar resistive switching scheme.