The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Feb. 11, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Peter Brick, Regensburg, DE;

Julius Muschaweck, Gauting, DE;

Joachim Frank, Coburg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 31/0232 (2014.01); G02B 19/00 (2006.01); H01L 33/58 (2010.01); F21K 99/00 (2010.01); G01J 1/04 (2006.01); H01L 31/054 (2014.01); H01L 31/0224 (2006.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
G02B 19/0028 (2013.01); H01L 31/022408 (2013.01); H01L 31/022433 (2013.01); H01L 33/38 (2013.01); H01L 33/58 (2013.01); Y02E 10/52 (2013.01); F21K 9/50 (2013.01); G01J 1/0411 (2013.01); G01J 1/0422 (2013.01); H01L 2924/0002 (2013.01); H01L 31/0547 (2014.12);
Abstract

An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements and a concentrator which is a hollow body having a reflective inner area, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure including a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon projection of the contact structure into a plane of the optical structure, wherein the concentrator has an aperture on a side facing the semiconductor chip that is smaller than a side facing away from the semiconductor chip, and the optical structure is arranged on a side of the concentrator facing the semiconductor chip.


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