The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Dec. 18, 2012
Applicants:

Samsung Display Co., Ltd., Yongin, KR;

Dongwoo Fine-chem Co., Ltd., Iksan-si, KR;

Inventors:

In-Bae Kim, Yongin-si, KR;

Jong-Hyun Choung, Hwaseong-si, KR;

Seon-Il Kim, Seoul, KR;

Hong-Sick Park, Suwon-si, KR;

Wang Woo Lee, Suwon-si, KR;

Jae-Woo Jeong, Incheon, KR;

In Seol Kuk, Iksan-si, KR;

Sang-Tae Kim, Iksan-si, KR;

Young-Chul Park, Iksan-si, KR;

Keyong Bo Shim, Iksan-si, KR;

In-Ho Yu, Iksan-si, KR;

Young-Jin Yoon, Jeonju-si, KR;

Suck-Jun Lee, Jeonju-si, KR;

Joon-Woo Lee, Jeonju-si, KR;

Sang-Hoon Jang, Jeonju-si, KR;

Young-Jun Jin, Iksan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); C23F 1/18 (2006.01); H01L 21/28 (2006.01); C23F 1/26 (2006.01); H01L 27/12 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C23F 1/18 (2013.01); H01L 21/28008 (2013.01); C23F 1/26 (2013.01); H01L 27/124 (2013.01); H01L 21/32134 (2013.01);
Abstract

A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.


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