The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Jun. 05, 2009
Kozo Osada, Ibaraki, JP;
Hiroaki Ohtsuka, Ibaraki, JP;
Kozo Osada, Ibaraki, JP;
Hiroaki Ohtsuka, Ibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
Provided is a sintered oxide compact target for sputtering comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the composition ratio of the respective elements satisfies the Formula of InGaZnO{wherein 0.2≦x/(x+y)≦0.8, 0.1≦z/(x+y+z)≦0.5, a=(3/2)x+(3/2)y+z}, and the number of ZnGaOspinel phases having a grain size of 3 μm or larger existing in a 90 μm×90 μm area range of the sintered oxide compact target is 10 or less. With this sintered oxide compact target for sputtering comprising In, Ga, Zn, O and unavoidable impurities, the structure of the sintered compact target is improved, the formation of a phase to become the source of nodules is minimized, and the bulk resistance value is reduced. Whereby provided is a high density IGZO target capable of inhibiting abnormal discharge and which can be used in DC sputtering.