The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Nov. 13, 2013
Applicant:
Sifotonics Technologies Co., Ltd., Woburn, MA (US);
Inventors:
Mengyuan Huang, Beijing, CN;
Liangbo Wang, Beijing, CN;
Wang Chen, Beijing, CN;
Ching-yin Hong, Lexington, MA (US);
Dong Pan, Andover, MA (US);
Assignee:
SiFotonics Technologies Co., Ltd., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 31/0232 (2013.01); H01S 5/2004 (2013.01); H01S 5/2018 (2013.01); H01S 5/2205 (2013.01); H01S 5/20 (2013.01); H01S 5/18325 (2013.01); H01S 5/18341 (2013.01); H01S 5/2059 (2013.01);
Abstract
Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.