The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Dec. 13, 2011
Applicant:
Katsutoshi Saeki, Miyagi, JP;
Inventor:
Katsutoshi Saeki, Miyagi, JP;
Assignee:
LAPIS Semiconductor Co., Ltd., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/14 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0466 (2013.01); G11C 16/34 (2013.01); G11C 16/04 (2013.01); G11C 7/062 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01);
Abstract
A method for writing data in a semiconductor storage device and a semiconductor storage device are provided, that can reduce variations in readout current from a sub storage region which serves as a reference cell for the memory cells of the semiconductor storage device, thereby preventing an improper determination from being made when determining the readout current from a memory cell. In the method, data is written on a memory cell in two data write steps by applying voltages to the first and second impurity regions of the memory cell, the voltages being different in magnitude from each other.