The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Oct. 01, 2013
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Maki Hasegawa, Tokyo, JP;
Masataka Shiramizu, Tokyo, JP;
Shinji Sakai, Tokyo, JP;
Takuya Shiraishi, Tokyo, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/567 (2006.01); H03K 17/12 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H03K 17/12 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H03K 2217/0036 (2013.01); H01L 23/3107 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48464 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A transistor being one of an IGBT and a MOSFET and arranged near a gate control circuit applies a gate control signal from the gate control circuit to the gate of a transistor arranged far from the gate control circuit. A gate control signal is applied via a resistive element to the transistor arranged near the gate control circuit.