The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Jul. 12, 2012
Applicants:

Zhenxian Liang, Knoxville, TN (US);

Laura D. Marlino, Oak Ridge, TN (US);

Puqi Ning, Knoxville, TN (US);

Fei Wang, Knoxville, TN (US);

Inventors:

Zhenxian Liang, Knoxville, TN (US);

Laura D. Marlino, Oak Ridge, TN (US);

Puqi Ning, Knoxville, TN (US);

Fei Wang, Knoxville, TN (US);

Assignees:

UT-BATTELLE, LLC, Oak Ridge, TN (US);

UNIVERSITY OF TENNESSEE RESEARCH FOUNDATION, Knoxville, TN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/34 (2006.01); H01L 23/473 (2006.01); H01L 23/373 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); H01L 23/3735 (2013.01); H01L 2224/8384 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/13055 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/83825 (2013.01); H01L 2224/8383 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/1305 (2013.01);
Abstract

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.


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