The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jan. 11, 2010
Applicants:
Fabrice Letertre, Grenoble, FR;
Bruce Faure, Paris, FR;
Pascal Guenard, Froges, FR;
Inventors:
Assignee:
SOITEC, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); C30B 29/40 (2006.01); C30B 33/02 (2006.01); C30B 33/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02664 (2013.01); H01L 21/762 (2013.01); C30B 29/403 (2013.01); C30B 33/02 (2013.01); C30B 33/06 (2013.01); H01L 21/02381 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/76254 (2013.01);
Abstract
A method for the formation of an at least partially relaxed strained material layer, comprises providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.