The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Sep. 09, 2009
Applicants:

Hideo Yoshino, Chiba, JP;

Hirofumi Harada, Chiba, JP;

Jun Osanai, Chiba, JP;

Inventors:

Hideo Yoshino, Chiba, JP;

Hirofumi Harada, Chiba, JP;

Jun Osanai, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); G05F 3/02 (2006.01); H01L 27/088 (2006.01); G05F 3/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); G05F 3/24 (2013.01);
Abstract

A reference voltage generating circuit has more than two first wells each having a first impurity concentration and more than two second wells each having a second impurity concentration different from the first impurity concentration. A first group of MOS transistors has more than two MOS transistors formed in respective ones of the first wells. A second group of MOS transistors has More than two MOS transistors formed in respective ones of the second wells.


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