The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Sep. 29, 2011
Xiangdong Chen, Irvine, CA (US);
Henry Kuo-shun Chen, Irvine, CA (US);
Wei Xia, Irvine, CA (US);
Bruce Chih-chieh Shen, Irvine, CA (US);
Xiangdong Chen, Irvine, CA (US);
Henry Kuo-Shun Chen, Irvine, CA (US);
Wei Xia, Irvine, CA (US);
Bruce Chih-Chieh Shen, Irvine, CA (US);
BROADCOM CORPORATION, Irvine, CA (US);
Abstract
According to one exemplary embodiment, a method for fabricating a metal-insulator-metal (MIM) capacitor in a semiconductor die comprises forming a bottom capacitor electrode over a device layer situated below a first metallization layer of the semiconductor die, and forming a top capacitor electrode over an interlayer barrier dielectric formed over the bottom capacitor electrode. The top capacitor electrode is formed from a local interconnect metal for connecting devices formed in the device layer. In one embodiment, the bottom capacitor electrode is formed from a gate metal. The method may further comprise forming a metal plate in the first metallization layer and over the top capacitor electrode, and connecting the metal plate to the bottom capacitor electrode to provide increased capacitance density.