The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Aug. 05, 2009
Guillaume Boccardi, Lueven, BE;
Mark C. J. C. M. Kramer, Sittard, NL;
Johannes J. T. M. Donkers, Valkenswaard, NL;
LI Jen Choi, Mountain View, CA (US);
Stefaan Decoutere, Haasrode, BE;
Arturo Sibaja-hernandez, Heverlee, BE;
Stefaan Van Huylenbroeck, Kessel-Lo, BE;
Rafael Venegas, Heverlee, BE;
Guillaume Boccardi, Lueven, BE;
Mark C. J. C. M. Kramer, Sittard, NL;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Li Jen Choi, Mountain View, CA (US);
Stefaan Decoutere, Haasrode, BE;
Arturo Sibaja-Hernandez, Heverlee, BE;
Stefaan Van Huylenbroeck, Kessel-Lo, BE;
Rafael Venegas, Heverlee, BE;
NXP, B.V., Eindhoven, NL;
Abstract
The invention relates to a semiconductor device () comprising a substrate (), a semiconductor body () comprising a bipolar transistor that comprises a collector region (), a base region (), and an emitter region (), wherein at least a portion of the collector region () is surrounded by a first isolation region (), the semiconductor body () further comprises an extrinsic base region () arranged in contacting manner to the base region (). In this way, a fast semiconductor device with reduced impact of parasitic components is obtained.