The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Jan. 10, 2013
Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventor:

Masahiro Mitani, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 21/3065 (2006.01); G02F 1/1362 (2006.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 27/1266 (2013.01); H01L 21/76254 (2013.01); H01L 21/3065 (2013.01); G02F 1/136277 (2013.01); H01L 27/1259 (2013.01); H01L 25/0753 (2013.01);
Abstract

According to a semiconductor substrate (), a space (A) between a plurality of Si thin film (), which are provide apart from one another on the insulating substrate (), is (I) larger than a difference between elongation of part of the insulating substrate which part corresponds to the space (A) and elongation of each of Si wafers () when a change is made from room temperature to 600° C. and (II) smaller than 5 mm. This causes an increase in a region of each of a plurality of semiconductor thin films which region has a uniform thickness, and therefore prevents transferred semiconductor layers and the insulating substrate from being fractured or chipped.


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