The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Nov. 22, 2013
National Applied Research Laboratories, Taipei, TW;
Chia-Hua Ho, Hsinchu, TW;
Ming-Daou Lee, Chiayi, TW;
Wen-Cheng Chiu, Hsinchu, TW;
Cho-Lun Hsu, Hsinchu, TW;
NATIONAL APPLIED RESEARCH LABORATORIES, Taipei, TW;
Abstract
A semiconductor memory storage array device comprises a first electrode layer, an oxide layer, a second electrode layer, a memory material layer and a first insulator layer. The oxide layer is disposed on the first electrode layer. The second electrode layer is disposed on the oxide layer. The memory material layer is disposed on the second electrode layer. The first insulator layer is disposed adjacent to two sidewalls of the first electrode layer, the oxide layer, the second electrode layer and the memory material layer, so to define a gap either between the first electrode layer and the oxide layer or between the second electrode layer and the oxide layer.