The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Sep. 13, 2012
Applicants:

Riccardo Depetro, Domodossola, IT;

Aldo Vittorio Novelli, St. Lorenzo Parabiago, IT;

Ignazio Salvatore Bellomo, Rozzano, IT;

Inventors:

Riccardo Depetro, Domodossola, IT;

Aldo Vittorio Novelli, St. Lorenzo Parabiago, IT;

Ignazio Salvatore Bellomo, Rozzano, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza (MB), IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01K 1/18 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7817 (2013.01); H01L 29/7818 (2013.01); H01L 29/861 (2013.01); H01L 28/20 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01);
Abstract

A semiconductor structure including a high-voltage transistor; voltage dropping circuitry, at least part of which is overlapping the high-voltage transistor; at least one intermediate contact point to the voltage dropping circuitry, connected to at least one intermediate position between a first and a second end of the voltage dropping circuitry; and at least one external connection connecting the at least one intermediate contact point to outside of the semiconductor structure.


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