The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Aug. 30, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-Ku, JP;
Inventor:
Kenichi Ide, Kuwana, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4941 (2013.01); H01L 21/28052 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01);
Abstract
In one embodiment, a semiconductor device includes a semiconductor substrate, and a gate insulator arranged on the semiconductor substrate. The device further includes a gate electrode including a semiconductor layer and a metal layer which are sequentially arranged on the gate insulator. The device further includes a contact plug arranged on the gate electrode to penetrate the metal layer, and having a bottom surface at a level lower than an upper surface of the semiconductor layer.