The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Mar. 22, 2013
Shigeru Kusunoki, Tokyo, JP;
Shigeru Kusunoki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a channel layer formed on a substrate, an insulating layer formed in contact with the channel layer, an impurity-doped first semiconductor layer formed on an opposite side of the insulating layer from the channel layer, an impurity-doped second semiconductor layer formed on an opposite side of the first semiconductor layer from the insulating layer, and a gate electrode formed on an opposite side of the second semiconductor layer from the first semiconductor layer. A quotient of an impurity density of the first semiconductor layer divided by a relative permittivity of the first semiconductor layer is greater than a quotient of an impurity density of the second semiconductor layer divided by a relative permittivity of the second semiconductor layer.