The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Apr. 08, 2014
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Toshio Nakajima, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/66666 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01L 29/0634 (2013.01); H01L 29/0834 (2013.01);
Abstract
A semiconductor device that includes the following is manufactured: an nbase layer; a p-type base layer formed on the surface of the nbase layer; an nsource layer formed in the inner area of the p-type base layer; a gate electrode formed so as to face a channel region across a gate insulating film; a plurality of p-type columnar regions that are formed in the nbase layer so as to continue from the p-type base layer and that are arranged at a first pitch; and a plurality of pcollector layers that are selectively formed on the rear surface of the nbase layer and that are arranged at a second pitch larger than the first pitch.