IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9041085 B1

PDFFull Text
Date of Patent:
May. 26, 2015

Filed:

Apr. 27, 2012

Semiconductor device and method of forming the same

Applicants:

Kiyonori Oyu, Tokyo, JP;

Koji Taniguchi, Tokyo, JP;

Koji Hamada, Tokyo, JP;

Hiroaki Taketani, Tokyo, JP;

Inventors:

Kiyonori Oyu, Tokyo, JP;

Koji Taniguchi, Tokyo, JP;

Koji Hamada, Tokyo, JP;

Hiroaki Taketani, Tokyo, JP;

Assignee:

PS4 LUXCO S.A.R.L., Luxembourg, LU;

Attorney:

Young & Thompson

Primary Examiner:

Matthew Reames

Assistant Examiner:

John Bodnar

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 27/0207 (2013.01); H01L 27/10817 (2013.01); H01L 28/91 (2013.01); H01L 29/4236 (2013.01); H01L 29/66621 (2013.01); H01L 29/1037 (2013.01); H01L 27/108 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in the semiconductor substrate, the first diffusion region covering an upper portion of a first side of the first gate groove; and a second diffusion region in the semiconductor substrate. The second diffusion region covers a second side of the first gate groove. The second diffusion region has a bottom which is deeper than a top of the first fin structure.

Find Patent Forward Citations

Loading…