The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Oct. 07, 2010
Catherine Anne Dubourdieu, New York, NY (US);
Martin Michael Frank, Dobbs Ferry, NY (US);
Vijay Narayanan, New York, NY (US);
Catherine Anne Dubourdieu, New York, NY (US);
Martin Michael Frank, Dobbs Ferry, NY (US);
Vijay Narayanan, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Centre National de la Recherche Scientifique, Paris, FR;
Abstract
An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile