The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Aug. 02, 2012
Applicants:

Kazuki Tani, Tokyo, JP;

Shinichi Saito, Tokyo, JP;

Katsuya Oda, Tokyo, JP;

Inventors:

Kazuki Tani, Tokyo, JP;

Shinichi Saito, Tokyo, JP;

Katsuya Oda, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3223 (2013.01);
Abstract

To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layerwhich is formed on an insulating film, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrodeand an n-type diffused layer electroderespectively provided at both ends of the barrier layer, and a monocrystalline Ge light emission partprovided on the barrier layerbetween the electrodes. At least a part of current that flows between the electrodesflows in the barrier layerin a horizontal direction with respect to a substrate


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