The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
May. 29, 2013
William F. Seng, Edgewood, NM (US);
Richard L. Glover, Albuquerque, NM (US);
William F. Seng, Edgewood, NM (US);
Richard L. Glover, Albuquerque, NM (US);
Other;
Abstract
Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile