The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Oct. 15, 2014
Applicant:

AU Optronics Corporation, Hsin-Chu, TW;

Inventor:

Yi-Sheng Cheng, Hsin-Chu, TW;

Assignee:

AU OPTRONICS CORPORATION, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 27/13 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); H01L 27/1255 (2013.01); H01L 27/1214 (2013.01); H01L 27/13 (2013.01);
Abstract

A pixel, a storage capacitor, and a method for forming the same. The storage capacitor formed on a substrate comprises a semiconductor layer, a first dielectric layer, a first conductive layer, a second dielectric layer and a second conductive layer. The semiconductor layer is formed on the substrate wherein the semiconductor layer and the substrate are covered by the first dielectric layer. The first conductive layer is formed on a part of the first dielectric layer. The second dielectric layer is formed on the first conductive layer, and the lateral side of the stacking structure including the second dielectric layer and the first conductive layer has a taper shaped. The second conductive layer is formed on a part of the second dielectric layer.


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