The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Oct. 21, 2013
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 31/0216 (2014.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); C23C 18/12 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 29/66 (2006.01); H01L 33/44 (2010.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 29/0607 (2013.01); H01L 21/02282 (2013.01); C23C 18/1216 (2013.01); C23C 18/1245 (2013.01); C23C 18/1258 (2013.01); C23C 18/1287 (2013.01); C23C 18/1291 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/1868 (2013.01); Y02E 10/547 (2013.01); H01L 21/02178 (2013.01); H01L 29/66462 (2013.01); H01L 33/44 (2013.01); H01L 29/2003 (2013.01);
Abstract
A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.