The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Mar. 11, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Chang-seung Lee, Yongin-si, KR;
Yong-sung Kim, Namyangju-si, KR;
Joo-ho Lee, Hwaseong-si, KR;
Yong-seok Jung, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 29/66045 (2013.01); H01L 29/78 (2013.01); H01L 29/4908 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract
Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.