The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Dec. 11, 2009
Applicants:
Wolfgang Mehr, Friedersdorf, DE;
Gunther Lippert, Frankfurt an der Oder, DE;
Inventors:
Wolfgang Mehr, Friedersdorf, DE;
Gunther Lippert, Frankfurt an der Oder, DE;
Assignee:
IHP GmbH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIK, Frankfurt an der Oder, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/737 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
H01L 29/16 (2013.01); H01L 29/1606 (2013.01); H01L 29/7376 (2013.01); H01L 29/7606 (2013.01);
Abstract
A depletion-layer transistor comprising a base, an emitter and a collector, in which the emitter contains a tunnel diode which permits a tunnel current of charge carriers from the emitter in the direction of the collector when an emitter-base voltage above a first threshold voltage is applied in the direction of current flow, and in which the base contains a graphene layer.