The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Mar. 14, 2013
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Dong Kee Lee, Seoul, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8244 (2006.01); H01L 27/24 (2006.01); H01L 27/06 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 27/0629 (2013.01); H01L 45/10 (2013.01); H01L 45/145 (2013.01); H01L 45/122 (2013.01);
Abstract
Disclosed is a semiconductor device having a substrate including first and second regions. First interlayer insulation layers and conductive patterns alternately are stacked on a first region of the substrate. A second interlayer insulation layer covers the first interlayer insulation layers and the conductive patterns. A resistor is formed in the second interlayer insulation layer in the second region of the substrate.