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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9040372 B1

PDFFull Text
Date of Patent:
May. 26, 2015

Filed:

May. 07, 2013

Niobium and vanadium organometallic precursors for thin film deposition

Applicant:

L'air Liquide, Société Anonyme Pour L'etude ET L'exploitation Des Procédés Georges Claude, Paris, FR;

Inventors:

Nicolas Blasco, San Francisco, CA (US);

Antony Correia-Anacleto, Créteil, FR;

Audrey Pinchart, Toulousse, FR;

Andreas Zauner, Voisins le Bretonneux, FR;

Assignee:

L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges, Paris, FR;

Attorney:

Patricia E. McQueeney

Primary Examiner:

Kevin Parendo

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/4763 (2006.01); H01L 21/02 (2006.01); H01L 21/314 (2006.01); C07F 9/00 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02205 (2013.01); H01L 21/3141 (2013.01); H01L 21/0228 (2013.01); C07F 9/00 (2013.01); C23C 16/45553 (2013.01);
Abstract

Disclosed are methods for forming a metal-containing layer on a substrate. The methods include providing a vapor and at least one reaction gas and reacting the vapor and the reaction gas with the substrate by a deposition process. The vapor may be selected from the group consisting of (Cp)V(═NtBu)(NEt); (Cp)V(═NtBu)(NMe); (Cp)V(═NtBu)(NEtMe); (Cp)V(═NiPr)(NEt); (Cp)V(═NiPr)(NMe); (Cp)V(═NiPr)(NEtMe); (Cp)V(═NCH)(NEt); (Cp)V(═NCH)(NMe); (Cp)V(═NCH)(NEtMe); (Cp)Nb(═NtBu)(NEt); (Cp)Nb(═NtBu)(NMe); (Cp)Nb(═NtBu)(NEtMe); (Cp)Nb(═NiPr)(NEt); (Cp)Nb(═NiPr)(NMe); (Cp)Nb(═NiPr)(NEtMe); (Cp)Nb(═NCH)(NEt); (Cp)Nb(═NCH)(NMe); and (Cp)Nb(═NCH)(NEtMe). The reaction gas may be selected from the group consisting of hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, carbon monoxide, ammonia, organic amine, silane, disilane, higher silanes, silylamines, diborane, hydrazine, methylhydrazine, chlorosilane, chloropolysilane, metal alkyl, arsine, phosphine, trialkylboron, oxygen, hydrogen peroxide, nitrous oxide, nitrogen monoxide, nitrogen dioxide, alcohols, plasma comprising fragments of those species, and combinations thereof.

Find Patent Forward Citations

Blasco, Nicolas. (2015). Niobium and vanadium organometallic precursors for thin film deposition (U.S. Patent No. 9040372). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9040372

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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