The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Nov. 14, 2011
Applicants:

Ahmed Abou-kandil, Elmsford, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Augustin J. Hong, White Plains, NY (US);

Jeehwan Kim, Los Angeles, CA (US);

Mohamed Saad, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Inventors:

Ahmed Abou-Kandil, Elmsford, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Augustin J. Hong, White Plains, NY (US);

Jeehwan Kim, Los Angeles, CA (US);

Mohamed Saad, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/042 (2014.01); H01L 31/075 (2012.01); H01L 27/146 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/075 (2013.01); H01L 27/14692 (2013.01); H01L 31/202 (2013.01); Y02E 10/548 (2013.01);
Abstract

A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.


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