The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Dec. 15, 2011
Yasunori Yokoyama, Ichihara, JP;
Hisayuki Miki, Chiba, JP;
Yasunori Yokoyama, Ichihara, JP;
Hisayuki Miki, Chiba, JP;
TOYODA GOSEI CO., LTD., Aichi, JP;
Abstract
A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer () made of a group-III nitride compound on a substrate () by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (), a light-emitting layer (), and a p-type semiconductor layer () each made of a group-III nitride compound semiconductor on the intermediate layer (). Nitrogen is used as the group-V element, and the thickness of the intermediate layer () is in the range of 20 to 80 nm.