The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Oct. 06, 2011
Applicants:

Jin-seok Lee, Daejeon, KR;

Bo-yun Jang, Daejeon, KR;

Young-soo Ahn, Daejeon, KR;

Inventors:

Jin-Seok Lee, Daejeon, KR;

Bo-Yun Jang, Daejeon, KR;

Young-Soo Ahn, Daejeon, KR;

Assignee:

KOREA INSTITUTE OF ENERGY RESEARCH, Yuseong-Gu, Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01); C30B 15/18 (2006.01); C30B 15/30 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); Y10T 117/1032 (2015.01); Y10T 117/1072 (2015.01); Y10T 117/1068 (2015.01); C30B 15/10 (2013.01); C30B 35/002 (2013.01);
Abstract

The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.


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