The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Dec. 06, 2010
Applicants:

Norbert Auner, Glashuetten, DE;

Christian Bauch, Muldenstein, DE;

Sven Holl, Gueckingen, DE;

Rumen Deltschew, Leipzig, DE;

Javad Mohsseni, Bitterfeld-Wolfen, DE;

Gerd Lippold, Leipzig, DE;

Thoralf Gebel, Dresden, DE;

Inventors:

Norbert Auner, Glashuetten, DE;

Christian Bauch, Muldenstein, DE;

Sven Holl, Gueckingen, DE;

Rumen Deltschew, Leipzig, DE;

Javad Mohsseni, Bitterfeld-Wolfen, DE;

Gerd Lippold, Leipzig, DE;

Thoralf Gebel, Dresden, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/08 (2006.01); C08G 77/60 (2006.01); C01B 33/04 (2006.01); C01G 17/00 (2006.01); C08G 79/14 (2006.01);
U.S. Cl.
CPC ...
C08G 77/60 (2013.01); C01B 33/04 (2013.01); C01G 17/00 (2013.01); C08G 79/14 (2013.01);
Abstract

Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.


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