The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
May. 20, 2010
Wei-heng Shih, Bryn Mawr, PA (US);
Hongyu Luo, Lexington, MA (US);
Christian Martorano, Marlton, NJ (US);
Wan Y. Shih, Bryn Mawr, PA (US);
Wei-Heng Shih, Bryn Mawr, PA (US);
Hongyu Luo, Lexington, MA (US);
Christian Martorano, Marlton, NJ (US);
Wan Y. Shih, Bryn Mawr, PA (US);
Drexel University, Philadelphia, PA (US);
Abstract
A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The −dcoefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.