The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Jul. 18, 2012
Applicants:

Philippe Absil, Loupoigne, BE;

Shankar Kumar Selvaraja, Ghent, BE;

Inventors:

Philippe Absil, Loupoigne, BE;

Shankar Kumar Selvaraja, Ghent, BE;

Assignees:

IMEC, Leuven, BE;

Universiteit Gent, Ghent, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L 21/30 (2006.01); G01N 21/95 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); G01B 2210/56 (2013.01);
Abstract

A method is described for improving the uniformity over a predetermined substrate area of a spectral response of photonic devices fabricated in a thin device layer. The method includes (i) establishing an initial device layer thickness map for the predetermined area, (ii) establishing a linewidth map for the predetermined area, and (iii) establishing an etch depth map for the predetermined area. The method further includes, based on the initial device layer thickness map, the linewidth map and the etch depth map, calculating an optimal device layer thickness map and a corresponding thickness correction map for the predetermined substrate area taking into account photonic device design data. Still further, the method includes performing a location specific corrective etch process in accordance with the thickness correction map.


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