The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jan. 15, 2010
Applicants:
Raymond Anthony Spits, Freeport Ballasalla, GB;
Carlton Nigel Dodge, Freeport Ballasalla, GB;
Inventors:
Raymond Anthony Spits, Freeport Ballasalla, GB;
Carlton Nigel Dodge, Freeport Ballasalla, GB;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/04 (2006.01); B01J 3/06 (2006.01); B01J 23/745 (2006.01); B01J 23/75 (2006.01); B01J 23/755 (2006.01);
U.S. Cl.
CPC ...
C30B 29/04 (2013.01); B01J 3/062 (2013.01); B01J 23/745 (2013.01); B01J 23/75 (2013.01); B01J 23/755 (2013.01); B01J 2203/061 (2013.01); B01J 2203/062 (2013.01); B01J 2203/0655 (2013.01); B01J 2203/068 (2013.01);
Abstract
A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilized is described. The growth is effected at a temperature in the range from 1280° C. to 1390° C.