The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Mar. 12, 2013
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Seungjune Jeon, Milpitas, CA (US);
Idan Alrod, Herzliya, IL;
Qing Li, Milpitas, CA (US);
Xiaoyu Yang, Milpitas, CA (US);
Assignee:
SANDISK TECHNOLOGIES INC., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/50 (2006.01); G11C 16/34 (2006.01); G06F 11/10 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 16/3404 (2013.01); G06F 11/1068 (2013.01); G11C 2029/5004 (2013.01); G11C 16/3418 (2013.01); G11C 16/349 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01);
Abstract
A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.