The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Jun. 19, 2014
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Kenichi Kawaguchi, Ebina, JP;

Yoshiaki Nakata, Isehara, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/183 (2006.01); H01S 5/34 (2006.01); B82Y 20/00 (2011.01); H01S 5/10 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2027 (2013.01); H01S 5/1042 (2013.01); H01S 5/18341 (2013.01); H01S 5/1835 (2013.01); H01S 5/18369 (2013.01); H01S 5/3428 (2013.01); H01S 5/34306 (2013.01); B82Y 20/00 (2013.01); Y10S 977/951 (2013.01);
Abstract

A semiconductor laser includes a semiconductor nanowire of a first conductivity type provided over a substrate, a light emitting layer provided around the semiconductor nanowire and insulated at an upper end and a lower end thereof, a cladding layer of a second conductivity type different from the first conductivity type, the cladding layer being provided at an outer periphery of the light emitting layer, a first electrode electrically coupled to an end portion of the semiconductor nanowire, a second electrode electrically coupled to an outer periphery of the cladding layer, a first reflection mirror provided at a one-end portion side of the semiconductor nanowire, and a second reflection mirror provided at the other end portion side of the semiconductor nanowire.


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