The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Feb. 06, 2014
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Tae Kyun Shin, Icheon-si, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/418 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); G11C 5/148 (2013.01);
Abstract

The semiconductor device includes a power source signal generator and a redundancy signal generator. The power source signal generator generates a fuse power source signal driven to have a target level of an internal voltage signal. The fuse power source signal is generated to have a lower level than the target level of the internal voltage signal by a certain level during a period from a moment that a deep power-down mode starts till a moment that a level of the internal voltage signal reaches a predetermined level after termination of the deep power-down mode. The redundancy signal generator latches a fuse data in response to a fuse reset signal and a fuse set signal to generate a redundancy signal while the fuse power source signal is supplied.


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