The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jul. 26, 2013
International Business Machines Corporation, Armonk, NY (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
Keunwoo Kim, Somers, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory circuit includes a voltage boosting circuit for generating a voltage that exceeds a voltage supply of the voltage boosting circuit. The voltage boosting circuit includes a first transistor having a first polarity type and a second transistor having a second polarity type opposite the first transistor. The first transistor is a planar transistor, a source of the first transistor being connected with the voltage supply, and a gate of the first transistor receiving a control signal. The second transistor includes a gate formed in at least two planes. A source of the second transistor is connected with the voltage supply, a gate of the second transistor receives the control signal, and a drain of the second transistor is connected with a drain of the first transistor and forms an output of the voltage boosting circuit for generating a boosted supply voltage as a function of the control signal.