The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jan. 18, 2013
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Seung-Min Oh, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/16 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01);
Abstract
A read voltage generation circuit includes a register unit configured to store an initial read voltage code, a counter circuit configured to change a read voltage code in every read-retry operation, wherein an initial value of the read voltage code is the initial read voltage code; and a voltage generation circuit configured to generate a read voltage corresponding to a read voltage code produced by the counter circuit.
Oh, Seung-Min. (2015). Read voltage generation circuit, memory and memory system including the same (U.S. Patent No. 9036418). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9036418
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile