The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jun. 03, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/34 (2006.01); G11C 29/42 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 29/02 (2006.01); G11C 16/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/34 (2013.01); G11C 29/42 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/3431 (2013.01); G11C 16/349 (2013.01); G11C 16/00 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01);
Abstract
A method of operating a memory device includes applying an initial read voltage to a selected wordline to perform a read operation on memory cells connected to the selected wordline, determining whether a read failure occurs with respect to one or more of the memory cells, upon determining that a read failure has occurred with respect to some of the memory cells, determining threshold voltage distribution information for distinct groups of the memory cells, and determining a new read voltage to be applied to the selected wordline based on the threshold voltage distribution information.