The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Dec. 09, 2013
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Kang L. Wang, Santa Monica, CA (US);
Pedram Khalili Amiri, Los Angeles, CA (US);
Juan G. Alzate, Los Angeles, CA (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); H01L 43/08 (2013.01); H01L 27/228 (2013.01);
Abstract
A memory cell including information that is stored in the state of a magnetic bit (i.e. in a free layer, FL), where the FL magnetization has two stable states that may be canted (form an angle) with respect to the horizontal and vertical directions of the device is presented. The FL magnetization may be switched between the two canted states by the application of a voltage (i.e. electric field), which modifies the perpendicular magnetic anisotropy of the free layer.