The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Mar. 15, 2013
Applicants:
Hye-jin Kim, Seoul, KR;
Sang-kyu Kang, Anyang-si, KR;
Dong-hyun Sohn, Hwaseong-si, KR;
Dong-min Kim, Seoul, KR;
Kyu-chan Lee, Seoul, KR;
Inventors:
Hye-Jin Kim, Seoul, KR;
Sang-Kyu Kang, Anyang-si, KR;
Dong-Hyun Sohn, Hwaseong-si, KR;
Dong-Min Kim, Seoul, KR;
Kyu-Chan Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 5/147 (2013.01); G11C 11/1697 (2013.01);
Abstract
A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.