The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jun. 26, 2012
Applicant:
Richard J. Carter, Los Altos, CA (US);
Inventor:
Richard J. Carter, Los Altos, CA (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50008 (2013.01); G11C 13/0007 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/71 (2013.01); G11C 2213/75 (2013.01); G11C 2213/77 (2013.01);
Abstract
A method for programmed-state detection in memristor stacks includes applying a first secondary switching voltage across a memristor stack to produce a first programmed-state-dependent secondary switching response in a memristor in the memristor stack. The programmed-state-dependent secondary switching response results in a detectable change in the electrical resistance of the memristor stack. The method also includes measuring a first electrical resistance of the memristor stack and inferring the programmed state of the memristor stack from the measured electrical resistance.