The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Mar. 01, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Kazuhiro Kato, Kanagawa, JP;

Hiroyuki Tsurumi, Kanagawa, JP;

Yukio Sato, Kanagawa, JP;

Takehito Ikimura, Kanagawa, JP;

Akira Kumamoto, Tokyo, JP;

Hiroyuki Yamamoto, Kanagawa, JP;

Shoichi Imakake, Kanagawa, JP;

Tooru Asakawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/22 (2006.01); H02H 3/08 (2006.01); H01L 27/02 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H02H 3/08 (2013.01); H01L 27/0255 (2013.01); H02H 9/041 (2013.01);
Abstract

A semiconductor device for protecting loads from power surges includes a first resistor having a first end connected to a first supply terminal, a capacitor connected to a second end of the first resistor and a second supply terminal. There is a first transistor with a source connected to the first supply terminal and a gate connected to a point between the first resistor and the capacitor. A second resistor is connected between the drain of the first transistor and the second supply terminal, and a first diode is connected between the gate and the source of the first transistor. A second transistor has a drain connected to the first supply terminal, a source connected to the second supply terminal, and a gate connected to the drain of the first transistor. There is a second diode connected between the gate and the source of the second transistor.


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