The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Sep. 25, 2013
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Masahiro Totsuka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 49/02 (2006.01); H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 27/016 (2013.01);
Abstract

A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion, a second dielectric film having a first portion on the lower electrode and a second portion on the first dielectric film, the second portion of the second dielectric film being integral with the first portion of said second dielectric film, an upper electrode on a portion of the second dielectric film, and a reinforcing film disposed on the second dielectric film and in contact with a side of the upper electrode.


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