The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Aug. 19, 2013
Applicants:
Daniel Piper, Vancouver, WA (US);
Franklin Chiang, Vancouver, WA (US);
Ganesh Yerubandi, Vancouver, WA (US);
Inventors:
Daniel Piper, Vancouver, WA (US);
Franklin Chiang, Vancouver, WA (US);
Ganesh Yerubandi, Vancouver, WA (US);
Assignee:
WAFERTECH, LLC, Camas, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76232 (2013.01);
Abstract
A shallow trench isolation (STI) structure includes a top surface formed completely of silicon nitride. The top surface of the STI structure is coplanar with a top substrate surface or extends above the top substrate surface. The STI structures include further dielectric materials beneath the silicon nitride and an oxide liner and any portions that extend above the substrate surface are formed of silicon nitride.